smaj5.0a thru smaj188ca www.vishay.com vishay general semiconductor revision: 21-sep-12 1 document number: 88390 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage suppressors devices for bi-direction applications for bi-directional use ca suffix (e.g. smaj10ca). electrical characteristics apply in both directions. features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-directional and bi-directional ? 400 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % (300 w above 78 v) ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automo tive, and telecommunication. mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compliant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 2 01 class 1a whisker test polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2. rating is 300 w above 78 v (2) mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal primary characteristics v br uni-directional 6.40 v to 231 v v br bi-directional 6.40 v to 231 v v wm 5.0 v to 188 v p ppm 400 w, 300 w i fsm 40 a t j max. 150 c polarity uni-directional, bi-directional package do-215ab (smcg) do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power di ssipation with a 10 /1000 s waveform (1)(2) (fig. 1) p ppm 400 w peak pulse current with a waveform (1) i ppm see next table a peak forward surge current 8.3 ms sing le half sine-wave uni-directional only (2) i fsm 40 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
smaj5.0a thru smaj188ca www.vishay.com vishay general semiconductor revision: 21-sep-12 2 document number: 88390 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) pulse test: t p ? 50 ms (2) surge current waveform per fi g. 3 and derate per fig. 2 (3) for bi-directional types having v wm of 10 v and less, the i d limit is doubled (4) all terms and symbols are cons istent with ansi/ieee c62.35 (5) for the bi-directional smaj5.0ca, the maximum v br is 7.25 v (6) v f = 3.5 v at i f = 25 a (uni-dir ectional only) electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) uni bi min. max. smaj5.0a (5) ae we 6.40 7.07 10 5.0 800 43.5 9.2 smaj6.0a ag wg 6.67 7.37 10 6.0 800 38.8 10.3 smaj6.5a ak wk 7.22 7.98 10 6.5 500 35.7 11.2 smaj7.0a am wm 7.78 8.60 10 7.0 200 33.3 12.0 smaj7.5a ap wp 8.33 9.21 1.0 7.5 100 31.0 12.9 smaj8.0a ar wr 8.89 9.83 1.0 8.0 50 29.4 13.6 smaj8.5a at wt 9.44 10.4 1.0 8.5 10 27.8 14.4 smaj9.0a av wv 10.0 11.1 1.0 9.0 5.0 26.0 15.4 smaj10a ax wx 11.1 12.3 1.0 10 1.0 23.5 17.0 smaj11a az wz 12.2 13.5 1.0 11 1.0 22.0 18.2 smaj12a be xe 13.3 14.7 1.0 12 1.0 20.1 19.9 smaj13a bg xg 14.4 15.9 1.0 13 1.0 18.6 21.5 smaj14a bk xk 15.6 17.2 1.0 14 1.0 17.2 23.2 smaj15a bm xm 16.7 18.5 1.0 15 1.0 16.4 24.4 smaj16a bp xp 17.8 19.7 1.0 16 1.0 15.4 26.0 smaj17a br xr 18.9 20.9 1.0 17 1.0 14.5 27.6 smaj18a bt xt 20.0 22.1 1.0 18 1.0 13.7 29.2 smaj20a bv xv 22.2 24.5 1.0 20 1.0 12.3 32.4 smaj22a bx xx 24.4 26.9 1.0 22 1.0 11.3 35.5 smaj24a bz xz 26.7 29.5 1.0 24 1.0 10.3 38.9 smaj26a ce ye 28.9 31.9 1.0 26 1.0 9.5 42.1 smaj28a cg yg 31.1 34.4 1.0 28 1.0 8.8 45.4 smaj30a ck yk 33.3 36.8 1.0 30 1.0 8.3 48.4 smaj33a cm ym 36.7 40.6 1.0 33 1.0 7.5 53.3 smaj36a cp yp 40.0 44.2 1.0 36 1.0 6.9 58.1 smaj40a cr yr 44.4 49.1 1.0 40 1.0 6.2 64.5 smaj43a ct yt 47.8 52.8 1.0 43 1.0 5.8 69.4 smaj45a cv yv 50.0 55.3 1.0 45 1.0 5.5 72.7 smaj48a cx yx 53.3 58.9 1.0 48 1.0 5.2 77.4 smaj51a cz yz 56.7 62.7 1.0 51 1.0 4.9 82.4 smaj54a re ze 60.0 66.3 1.0 54 1.0 4.6 87.1 smaj58a rg zg 64.4 71.2 1.0 58 1.0 4.3 93.6 smaj60a rk zk 66.7 73.7 1.0 60 1.0 4.1 96.8 smaj64a rm zm 71.1 78.6 1.0 64 1.0 3.9 103 smaj70a rp zp 77.8 86.0 1.0 70 1.0 3.5 113 smaj75a rr zr 83.3 92.1 1.0 75 1.0 3.3 121 smaj78a rt zt 86.7 95.8 1.0 78 1.0 3.2 126 smaj85a rv zv 94.4 104 1.0 85 1.0 2.2 137 smaj90a rx zx 100 111 1.0 90 1.0 2.1 146 smaj100a rz zz 111 123 1.0 100 1.0 1.9 162 smaj110a se ve 122 135 1.0 110 1.0 1.7 177 smaj120a vg vg 133 147 1.0 120 1.0 1.6 193 smaj130a vk vk 144 159 1.0 130 1.0 1.4 209 smaj150a vm vm 167 185 1.0 150 1.0 1.2 243 smaj160a sp vp 178 197 1.0 160 1.0 1.2 259 smaj170a sr vr 189 209 1.0 170 1.0 1.09 275 smaj188a ss vs 209 231 1.0 188 1.0 0.91 328
smaj5.0a thru smaj188ca www.vishay.com vishay general semiconductor revision: 21-sep-12 3 document number: 88390 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) mounted on minimum r ecommended pad layout note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical junction capacitance thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance , junction to ambient (1) r ? ja 120 c/w typical thermal resistance, junction to lead r ? jl 30 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode smaj5.0a-e3/61 0.064 61 1800 7" diam eter plastic tape and reel smaj5.0a-e3/5a 0.064 5a 7500 13" diam eter plastic tape and reel smaj5.0ahe3/61 (1) 0.064 61 1800 7" diameter plastic tape and reel smaj5.0ahe3/5a (1) 0.064 5a 7500 13" diameter plastic tape and reel 0.1 1 10 100 p ppm - peak pul s e power (kw ) t d - pul s e width ( s ) 0.1 1 10 100 1000 10 000 0.2 " x 0.2 " (5.0 mm x 5.0 mm) copper pad area s s maj85 thru s maj188 s maj5.0 thru s maj78 non-repetitive pul s e waveform s hown in fig. 3 t a = 25 c 0 25 50 75 100 100 75 50 25 0 125 150 175 200 t j - initial temperature (c) peak pul s e power (p pp ) or current (i pp ) derating in percentage, % 0 1.0 2.0 3.0 4.0 0 50 100 150 t d t - time (m s ) i ppm - peak pul s e current, % i r s m t r = 10 s peak value i ppm half value - i ppm i pp 2 10/1000 s waveform a s defined by r.e.a. t j = 25 c pul s e width (t d ) i s defined a s the point where the peak current decay s to 50 % of i ppm 10 100 1000 10 000 10 1 100 200 c j - junction capacitance (pf) v wm - rever s e s tand-off voltage (v) uni-directional bi-directional mea s ured at s tand-off voltage v wm t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p
smaj5.0a thru smaj188ca www.vishay.com vishay general semiconductor revision: 21-sep-12 4 document number: 88390 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical transient thermal impedance fig. 6 - maximum non-repetitive forward surge current uni-directional only package outline dimensions in inches (millimeters) 1 10 100 1000 0.001 0.01 0.1 1.0 10 100 1000 t p - pul s e duration ( s ) tran s ient thermal impedance (c/w) 10 1 100 10 50 100 200 number of cycle s at 60 hz peak forwar d s urge current (a) t j = t j max. 8.3 m s s ingle half s ine-wave 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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